Defect detection method of display device and defect detection apparatus of display device

ABSTRACT

A defect detecting method of a display device includes a defect counting process that measuring a feature amount for each partial region of a display device (P 32 ), and counting regions which is determined as a defective portion based on the measured feature amount of the region (P 36 ), a process that stopping a manufacturing line of the display device when a number of defects counted at the defect counting process is greater than a first threshold value (P 38 , P 42 ), a defect density calculating process that calculating a defect density in a predetermined area when the number of defects counted at the defect counting process is smaller than the first threshold value (P 38 ), and a process that stopping the manufacturing line of the display device when the defect density calculated at the defect density calculating process is higher than a second threshold value (P 40 , P 42 ).

CROSS-REFERENCE TO RELATED APPLICATION

This is a Continuation Application of International Patent ApplicationNo. PCT/JP2008/002687, filed on Sep. 26, 2008, which claims priority toJapanese Patent Application No. 2007-261481, filed on Oct. 5, 2007, andclaims priority to and the benefit of U.S. Provisional Application No.61/282,229, filed on Jan. 5, 2010. The contents of the aforementionedapplications are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to flat panel display devices such asorganic electroluminescence (EL) elements, liquid crystal displayelements, or Field Emission Display (FED). Particularly, the presentinvention relates to a defect detection method and a defect detectionapparatus of such display devices.

BACKGROUND

Display devices such as liquid crystal display elements have featuresthat include compact size (small size), slimness (small thickness), lowpower consumption and lightness (light weight). Because of this,currently, the display devices are extensively used for variouselectronic equipments. Drive circuits or thin film transistors fordriving these display devices have been manufactured using an exposureapparatus generally referred to as a stepper.

However, the size of liquid crystal display elements, in particular, isbecoming ever larger, and after the 8^(th) generation, there occur manydifficult problems, such as manufacturing costs and device transportinglimitations, which cannot be solved by the scale-up extension ofconventional technology. Further, in order to reduce the manufacturingcosts, in addition to improving efficiency by increasing the substratesize, reduction in apparatus costs, reduction in running costs andimprovement of a yield of a large-sized panel have become key points.

In addition, organic ELs, field emission displays and the like have beenlaunched in the market, and reduction in an apparatus cost and reductionin a running cost have also become significant problems to be solved inrelation to the manufacturing of next generation of those displaydevices.

Patent Document 1 discloses a method for manufacturing liquid crystaldisplay elements using a flexible substrate which is in a roll shape asa countermeasure for the reduction of an apparatus cost of the liquidcrystal display elements and the reduction of a running cost.

Patent Document 2 discloses a display defect detection method fordetecting defects by selecting a resolution from an image of a liquidcrystal panel, which is photographed with high accuracy by using a linesensor, according to the type of various display defects such as rubbingunevenness (ununiformity) or gap unevenness (ununiformity).

-   [Patent Citation 1] Japanese Patent No. 3698749-   [Patent Citation 2] Japanese Patent Publication No. 2004-279239

The roll shaped flexible substrate has a length between several tens ofmeters and several hundreds of meters, as disclosed in the examples ofPatent document 1. Therefore, it is necessary to stop a manufacturingline when a fatal defect is generated. Meanwhile, there also existdefective portions which can be simply repaired.

Patent Document 2 selects an image resolution according to the type ofdisplay defects in finished products (end-products) of liquid crystaldisplay elements, but its purpose is only to find defects. Thus, whetheror not the defects must be repaired is not determined.

SUMMARY

In light of such circumstances, the present invention provides a displaydevice defect detection method and a display device defect detectionapparatus, which can find a defective portion in a wiring and the likeof a display device during a manufacturing process, and which candetermine whether the defect can be repaired in a repair line or thedefect requires a manufacturing line to be stopped.

A defect detection method of a display device which includes a pluralityof pixels according to a first aspect, the defect detection methodcomprises a measurement process that measuring a feature amount for eachpartial region of the display device; a first determination process thatdetermining whether the measured feature amount of each partial regionis within a first range; a calculating process that calculating adifference between the feature amount of the partial region and afeature amount of a peripheral partial region of the partial region,with respect to a region which is determined as being within the firstrange in the first determination process; and a second determinationprocess that determining whether the difference calculated by thecalculating process is within a second range.

According to the defect detection method, even if the feature amount ofthe partial region is within the first range, if the difference betweenthe partial region and the peripheral partial region thereof is large,the human eye seeing the display device recognizes the difference asluminance unevenness (ununiformity). The difference between the featureamount of the partial region and the feature amount of the peripheralpartial region of the partial region is calculated to detect defectswhich cause the luminance unevenness (ununiformity).

A defect detection method of a display device according to a secondaspect comprises a defect counting process that measuring a featureamount for each partial region of the display device, and counting aregion which is determined as a defective region based on the measuredfeature amount of a region; a process that stopping a manufacturing lineof the display device when a number of defects obtained in the defectcounting process is greater than a first threshold value; a defectdensity calculating process that calculating a defect density in apredetermined area when the number of defects obtained in the defectcounting process is smaller than the first threshold value; and aprocess that stopping the manufacturing line of the display device whenthe defect density obtained in the defect density calculating process isgreater than a second threshold value.

In the defect detection method of the display device according to thesecond aspect, the defect density of the display device is calculated todetermine whether to stop the manufacturing line. If the defect densityis high, the defective regions are concentrated in one portion. In sucha case, since simply repairing the portion is not sufficient, the defectdensity is employed as a determination reference.

A defect detection apparatus of a display device according to a thirdaspect comprises a feature amount determining section that measures afeature amount for each partial region of display device, and determineswhether the measured feature amount of a region is within a first range;and a difference determining section that calculates a differencebetween the feature amount of the partial region and a feature amount ofa peripheral partial region of the partial region, with respect to thepartial region which is determined as being within the first range atthe feature amount determining section, and determines whether thedifference is within a second range.

Even if the feature amounts of the partial region is within the firstrange, if the difference between the partial region and the peripheralpartial region thereof is large, the human eye seeing the display devicerecognizes the difference as luminance unevenness (ununiformity). Inthis regard, in the defect detection apparatus of the display device,the difference between the feature amount of the partial region and thefeature amount of the peripheral partial region of the partial region iscalculated to detect defects which cause the luminance unevenness(ununiformity).

A defect detection apparatus of a display device according to a fourthaspect comprises a defect number determining section that measures afeature amount for each partial region of the display device, and countsa number of defects in a partial region which is determined as adefective region based on the measured feature amount of the partialregion, and determines whether the number of defects is greater than afirst threshold value; and a defect density determining section thatcalculates the number of defects existing in a predetermined area whenthe defect number determining section determines that the number ofdefects is smaller than the first threshold value, and determineswhether the number of defects existing in the predetermined area isgreater than a second threshold value.

The fact that the number of defects existing in the predetermined areais greater than the second threshold value means that the defectiveregions are concentrated in one portion. In such a case, even if thedefective regions are repaired, the repaired regions are visible. Inthis regard, the defect detection apparatus of the display deviceaccording to the fourth aspect detects the defect density.

A defect detection apparatus of a display device according to a fifthaspect comprises a defect density determining section that measures afeature amount for each partial region of the display device, counts anumber of defects in the partial region which is determined as adefective region based on the measure feature amount of the partialregion, calculates the number of defects existing in a predeterminedarea, and determines whether the number of defects existing in thepredetermined area is greater than a second threshold value.

The defect detection apparatus of the display device according to thefifth aspect is possible to detect a defect of the display device bydetecting the defect density.

A method for manufacturing a display device according to a sixth aspectcomprises an element formation process that forming a pattern for aplurality of pixel region respectively; a measurement process thatmeasuring a state of the pattern formed on a partial region, when aplurality of the partial region is divided in the display regionincluding at least one of the pixel region; a first determinationprocess that obtaining a first determination information which indicatesa first state or a second state, in which the measured pattern state iswithin a predetermined reference in the first state, and the measuredpattern state out of the reference range in the second state; a seconddetermination process that obtaining a second determination information,in which comparing the first determination information of at least twopartial regions which are adjacent to each other among the plurality ofthe partial regions, when all the compared first determinationinformation indicate the second state, the second determinationinformation indicates a display unevenness (ununiformity).

The defect detection method and defect detection apparatus of thedisplay device according to the present invention, a defective portionin a wiring and the like of the display device can be found during amanufacturing process, and whether the defect can be repaired in arepair line or the defect requires a manufacturing line to be stoppedcan be determined.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view showing the configuration of a manufacturingapparatus 100 for manufacturing an organic EL element on a flexiblesubstrate FB.

FIG. 2A to FIG. 2C are schematic views showing monitoring of a firstmark AM and a second mark BM of a diffraction grating in an electrodeformation process of a manufacturing apparatus 100 for an organic ELelement.

FIG. 3A to FIG. 3C are views showing the states of a bottom-contact typeorganic EL element in which a light emitting layer IR and an ITOelectrode are formed.

FIG. 4A to FIG. 4C are views illustrating a first monitoring apparatusCH1 in a partition wall formation process.

FIG. 5A to FIG. 5C are views illustrating a second monitoring apparatusCH2 in an electrode formation process.

FIGS. 6A and 6B are views illustrating a fifth monitoring apparatus CH5in a process of a cutting apparatus 30 for forming a gap between asource electrode S and a drain electrode D.

FIG. 7A is a perspective view from a fifth alignment sensor CA5 to afifth monitoring apparatus CH5.

FIG. 7B is a flowchart illustrating a process of applying organicsemiconductor ink and a process of storing repair portions shown in FIG.7A.

FIG. 8A is a view showing an organic EL element 50 monitored by a fifthmonitoring apparatus CH5, a matrix MAT overlapped with the organic ELelement 50, and data Dn (m, n) of the matrix MAT.

FIG. 8B is a defect determination flowchart illustrating a procedure ofidentifying a defective portion based on data Dn (m, n) of a matrix MAT.

FIG. 8C is a flowchart different from a defect determination flowchartof FIG. 8B.

FIG. 9A is a schematic view showing a repair apparatus 110 that repairsan organic EL element 50 having repair portions through a batchprocessing.

FIG. 9B is a repair flowchart of a repair apparatus 110 in relation to abatch processing illustrated in FIG. 9A.

FIG. 10 is a schematic view showing a manufacturing and repair apparatus200 that monitors defective portions while manufacturing an organic ELelement 50, and repairs the defective portions in line.

DESCRIPTION OF EMBODIMENTS

An apparatus for manufacturing a display device (display element)described in the present embodiment can be applied to an organic ELelement, a liquid crystal display element or a field emission display.An apparatus and a method for manufacturing the organic EL element willbe representatively described.

<<Apparatus for Manufacturing Organic EL Element>>

In the case of manufacturing the organic EL element, it is necessary toform a substrate on which a thin film transistor (TFT) and a pixelelectrode are formed. In order to accurately form one or more organiccompound layers (light emitting element layers), which include a lightemitting layer on the pixel electrode which is formed on the substrate,it is necessary to form partition walls BA (bank layer) simply andaccurately on a boundary region of the pixel electrode.

FIG. 1 is a schematic view showing the configuration of a manufacturingapparatus 100 which manufactures an organic EL element 50 which includesa pixel electrode and a light emitting layer on a flexible substrate.

The manufacturing apparatus 100 for an organic EL element includes asupply roll (feeding roll) RL for supplying a band-shaped flexible sheetsubstrate FB which is wound in a roll shape. For example, the sheetsubstrate FB may have a length of 200 meters or more. The supply roll RLis rotated at a predetermined speed, so that the sheet substrate FB isfed in an X-axial direction (longitudinal direction) which is atransporting direction. Further, the manufacturing apparatus 100 for theorganic EL element includes rollers RR at a plurality of positions, androtating of these rollers RR, the sheet substrate FB is fed in theX-axial direction. The rollers RR may be rubber rollers which grip thesheet substrate FB from both surfaces thereof, or, if the sheetsubstrate FB has perforations, then the rollers RR may be ratchetrollers.

The manufacturing apparatus 100 for the organic EL element includes awind-up roll RE for winding the sheet substrate FB into a roll shape inthe final process thereof. Further, for a processing in a repair processof a defective portion, the wind-up roll RE winds the sheet substrate FBat a predetermined speed which is synchronized with that of the supplyroll RL and the rollers RR.

<Partition Wall Formation Process>

The sheet substrate FB which has been fed from the supply roll RL isinitially subject to a partition wall formation process in which thepartition walls BA are formed on the sheet substrate FB. In thepartition wall formation process, the sheet substrate FB is pressed byan imprint roller 10, and the sheet substrate FB is heated by a thermaltransfer roller 15 to a glass transition point or higher, such that theshape of the pressed partition walls BA is maintained. Therefore, apattern formed on the roller surface of the imprint roller 10 istransferred to the sheet substrate FB.

The roller surface of the imprint roller 10 is mirror-finished, and afine imprint mold 11 which is made from a material such as SiC, Ta andthe like is mounted on this roller surface. The fine imprint mold 11 hasa stamp for a wiring of a thin film transistor and a stamp for a displaypixel. Further, in order to form a first mark AM and a second mark BM(refer to FIG. 2) at both sides in the width direction of the band-shapeflexible substrate FB, the fine imprint mold 11 also has stamps for thefirst mark AM and the second mark BM.

The first mark AM and the second mark BM are formed simultaneously withthe formation of the partition walls BA for the wiring of the thin filmtransistor and the display pixel. Therefore, the positional accuracybetween the partition wall BA and the first and second marks AM and BMis equal to the positional accuracy of the fine imprint mold 11.

A first monitoring apparatus CH1 is provided downstream in the X-axisdirection from the imprint roller 10. The first monitoring apparatus CH1monitors (observes) whether or not the partition walls BA for the wiringof the thin film transistor and the display pixel have been accuratelyformed. The first monitoring apparatus CH1 includes a camera which iscomposed of a one-dimensional CCD or a two-dimensional CCD, a laserlength measuring device and the like. First alignment sensors CA1 areprovided downstream of the first monitoring apparatus CH1.

<Electrode Formation Process>

After the first mark AM and the second mark BM are detected by the firstalignment sensors CA1, the sheet substrate FB continues to move in theX-axis direction and is subject to an electrode formation process.

A thin film transistor (TFT) may employ either an inorganicsemiconductor based or an organic semiconductor. If the thin filmtransistor is formed using the organic semiconductor, the thin filmtransistor can be formed by utilizing a printing technology and/or adroplet applying technology.

Among thin-film transistors which use organic semiconductors, a fieldeffect transistor (FET) is particularly preferred. The electrodeformation process shown in FIG. 1 will be described with an FET bottomgate type organic EL element 50. After a gate electrode G, a gateinsulating layer I, a source electrode S, a drain electrode D and apixel electrode P are formed on the sheet substrate FB, an organicsemiconductor layer OS is formed.

In the electrode formation process, a droplet applying apparatus 20 isused which receives position information from the first alignmentsensors CA1 and applies (coats) droplets onto the sheet substrate FB.The droplet applying apparatus 20 can employ an inkjet method or adispenser method. The inkjet method includes a charge control method, apress vibration method, an electrical mechanical conversion method, anelectrical heat exchange method, an electrostatic suction method and thelike. According to a droplet applying method, material can be used lesswastefully and a predetermined amount of material can be accuratelyapplied in a predetermined position. Hereinafter, a droplet applyingapparatus 20 for a gate electrode G will be distinguished as a gatedroplet applying apparatus 20G in which G is added to the end thereof.The same applies for the other droplet applying apparatuses 20. Inaddition, the amount of one droplet of metal ink MI applied by thedroplet applying method is between, for example, 1 and 300 nanograms.

The gate droplet applying apparatus 20G applies the metal ink MI insidethe partition walls BA of a gate bus line GBL. Then, the metal ink MI isdried or baked using warm air or radiant heat such as far-infrared raysin a heat treatment apparatus BK. In this way, the gate electrode G isformed. The metal ink MI is a liquid in which conductive bodies having aparticle diameter of approximately 5 nm is stably dispersed in a solventat room temperature, and carbon, silver (Ag), gold (Au) or the like areused as the conductive bodies.

A second monitoring apparatus CH2 is provided downstream of the gatedroplet applying apparatus 20G. The second monitoring apparatus CH2monitors whether the metal ink MI has been applied on the gate bus lineGBL and serves as a conductive line. The second monitoring apparatus CH2includes a camera which is composed of a one-dimensional CCD or atwo-dimensional CCD. A second alignment sensor CA2 is provideddownstream of the second monitoring apparatus CH2.

Next, an insulating layer droplet applying apparatus 20I receivesposition information from the second alignment sensor CA2 and applieselectrical insulating ink of polyimide-based resin or urethane-basedresin on a switching portion. Then, the electrical insulating ink isdried and cured by warm air or radiant heat such as far-infrared rays bya heat treatment apparatus BK. In this way, the gate insulating layer Iis formed.

A third monitoring apparatus CH3 is provided downstream of theinsulating layer droplet applying apparatus 20I. The third monitoringapparatus CH3 monitors whether the electrical insulating ink is appliedon an accurate position. The third monitoring apparatus CH3 alsoincludes a camera which is composed of a one-dimensional CCD or atwo-dimensional CCD. A third alignment sensor CA3 is provided downstreamof the third monitoring apparatus CH3.

Next, a droplet applying apparatus 20SD for source, drain and pixelelectrode (source, drain, and pixel electrodes droplet applyingapparatus 20SD) receives position information from the third alignmentsensor CA3 and applies the metal ink MI inside the partition walls BA ofa source bus line SBL and inside the partition walls BA of the pixelelectrode P. Then, the metal ink MI is dried and baked by a heattreatment apparatus BK. In this way, an electrode in which the sourceelectrode S, the drain electrode D, and the pixel electrode P areconnected to each other is formed.

A fourth monitoring apparatus CH4 is provided downstream of the dropletapplying apparatus 20SD for source, drain, and pixel electrodes. Thefourth monitoring apparatus CH4 monitors whether the metal ink MI hasbeen applied on an accurate (correct) position. The fourth monitoringapparatus CH4 also includes a camera which is composed of aone-dimensional CCD or a two-dimensional CCD. A fourth alignment sensorCA4 is provided downstream of the fourth monitoring apparatus CH4.

Next, a cutting apparatus 30 receives position information from thefourth alignment sensor CA4 and cuts the source electrode S and thedrain electrode D which are connected to each other. It is preferred touse a Femtosecond laser as the cutting apparatus 30. An irradiationportion of the Femtosecond laser which uses a titanium sapphire laserirradiates laser light LL with a wavelength of 760 nm in pulses of 10KHz to 40 KHz while oscillating the laser light LL to the left and rightand up and down.

The cutting apparatus 30 can perform processing of a sub-micron order byusing the Femtosecond laser, and can accurately cuts a gap between thesource electrode S and the drain electrode D, which decides theproperties of the field effect transistor. The gap between the sourceelectrode S and the drain electrode D is approximately 20 μm to 30 μm.Through the cutting process, an electrode in which the source electrodeS is separated from the drain electrode D is formed. In addition to theFemtosecond laser, it is possible to use a carbon gas laser, a greenlaser or the like. Further, in addition to the laser, the gap may bemechanically cut by a dicing saw or the like.

A fifth monitoring apparatus CH5 is provided downstream of the cuttingapparatus 30. The fifth monitoring apparatus CH5 monitors whether thegap between the source electrode S and the drain electrode D has beenaccurately formed. The fifth monitoring apparatus CH5 also includes acamera which is composed of a one-dimensional CCD or a two-dimensionalCCD. A fifth alignment sensor CA5 is provided downstream of the fifthmonitoring apparatus CH5.

Next, an organic semiconductor droplet applying apparatus 20OS receivesposition information from the fifth alignment sensor CA5 and appliesorganic semiconductor ink on a switching portion between the sourceelectrode S and the drain electrode D. Then, the organic semiconductorink is dried and baked by warm air or radiant heat such as far-infraredrays by a heat treatment apparatus BK. In this way, the organicsemiconductor layer OS is formed.

In addition, a compound used to form the organic semiconductor ink maybe single crystalline material or amorphous material, and may be eithera low molecular compound or a high molecular compound. Particularlypreferable examples include single crystal or π-conjugated polymer of acondensed ring aromatic hydrocarbon compound, which is representativelyreferred to as pentacene, triphenylene, anthracene or the like.

A sixth monitoring apparatus CH6 is provided downstream of the organicsemiconductor droplet applying apparatus 20OS. The sixth monitoringapparatus CH6 monitors whether the organic semiconductor ink has beenapplied on an accurate position. The sixth monitoring apparatus CH6 alsoincludes a camera which is composed of a one-dimensional CCD or atwo-dimensional CCD. A sixth alignment sensor CA6 is provided downstreamof the sixth monitoring apparatus CH6.

<Light Emitting Layer Formation Process>

The manufacturing apparatus 100 for the organic EL element continuouslyperforms a process to form a light emitting layer IR of the organic ELelement on the pixel electrode P.

In the light emitting layer formation process, the droplet applyingapparatus 20 is used. As described above, it is possible to employ theinkjet method or the dispenser method. Further, according to the presentembodiment, the light emitting layer can also be formed using a printroller (which will not be described in detail).

The light emitting layer IR contains a host compound and aphosphorescent compound (also referred to as a phosphorescent lightemitting compound). The host compound is contained in a light emittinglayer. The phosphorescent compound allows light emitted from the excitedtriplet can be observed and emits phosphorescent light at roomtemperature.

A droplet applying apparatus 20Re for a red light emitting layerreceives position information from the sixth alignment sensor CA6 andapplies R solution onto the pixel electrode P so as to form a film whosethickness after drying is approximately 100 nm. The R solution isobtained by dissolving a polyvinylcarbazole (PVK) host material and reddopant in 1,2-dichloroethane.

Then, a droplet applying apparatus 20Gr for a green light emitting layerreceives position information from the sixth alignment sensor CA6 andapplies G solution onto the pixel electrode P. The G solution isobtained by dissolving the PVK host material and green dopant in1,2-dichloroethane.

Moreover, a droplet applying apparatus 20BL for a blue light emittinglayer receives position information from the sixth alignment sensor CA6and applies B solution onto the pixel electrode P. The B solution isobtained by dissolving the PVK host material and blue dopant in1,2-dichloroethane.

Thereafter, the light emitting solution is dried and cured using warmair or radiant heat such as far-infrared rays by a heat treatmentapparatus BK.

A seventh monitoring apparatus CH7 is provided downstream of the lightemitting layer formation process. The seventh monitoring apparatus CH7monitors whether the light emitting layers have been appropriatelyformed. A seventh alignment sensor CA7 is provided downstream of theseventh monitoring apparatus CH7.

Next, an insulating layer droplet applying apparatus 20I receivesposition information from the seventh alignment sensor CA7 and applieselectrical insulating ink of polyimide-based resin or urethane-basedresin on a part of the gate bus line GBL or the source bus line SBL suchthat there is no short-circuiting between these and a transparentelectrode ITO which will be described later. Further, the electricalinsulating ink is dried and cured using warm air or radiant heat such asfar-infrared rays by a heat treatment apparatus BK.

An eighth monitoring apparatus CH8 is provided downstream of theinsulating layer droplet applying apparatus 20I. The eighth monitoringapparatus CH8 monitors whether the electrical insulating ink has beenapplied. An eighth alignment sensor CA8 is provided downstream of theeighth monitoring apparatus CH8.

Thereafter, an ITO electrode droplet applying apparatus 20IT receivesposition information from the eighth alignment sensor CA8 and appliesITO (Indium Tin Oxide) ink on the red, green and blue light emittinglayers. The ITO ink is a compound obtained by adding several percent oftin oxide (SnO₂) to indium oxide (In₂O₃), and the electrode thereof istransparent. Further, amorphous material such as IDIXO (In₂O₃—ZnO) canalso be used to form a transparent conductive film. Preferably, thetransparent conductive film has a transmittance of 90% or more. Then,the ITO ink is dried and cured by warm air or radiant heat such asfar-infrared rays by a heat treatment apparatus BK.

A ninth monitoring apparatus CH9 is provided downstream of the ITOelectrode droplet applying apparatus 20IT. The ninth monitoringapparatus CH9 monitors whether the electrical insulating ink has beenapplied.

In addition, the organic EL element 50 may include a positive holetransporting layer and an electron transporting layer, and these layersmay be formed using a printing technology and/or a droplet applyingtechnology.

The manufacturing apparatus 100 for the organic EL element includes amain control unit 90. Signals monitored by the first to ninth monitoringapparatuses CH1 to CH9 and alignment signals in the first to eighthalignment sensors CA1 to CA8 are transmitted to the main control unit90. Further, the main control unit 90 controls the speed of the supplyroll RL and the rollers RR.

<Formation of Alignment Mark & Counter Mark>

The sheet substrate FB is expanded or contracted in the X-axis directionand the Y-axis direction by passing through the thermal transfer roller15 and the heat treatment apparatuses BK. Because of this, in themanufacturing apparatus 100 for the organic EL element, the firstalignment sensors CA1 are provided downstream of the thermal transferroller 15, and the second to eighth alignment sensors CA2 to CA8 areprovided after the heat treatment apparatuses BK, respectively. Further,when an imprint defect, applying defect and the like has occurred, inthe case of identifying defective portions and removing or repairingthem, it is necessarily required to specify the defective portions. Inthis regard, in the present embodiment, the first mark AM is also usedas the counter mark for checking (verify) the position of the X-axisdirection.

Hereinafter, the control of the electrode formation process performed inthe manufacturing apparatus 100 for the organic EL element will bedescribed with reference to FIG. 2A to FIG. 2C.

In FIG. 2A, the sheet substrate FB has at least one first mark AM atboth sides of the sheet substrate FB, respectively, with respect to thepartition walls BA for the wiring of the thin film transistor and thepartition walls BA for the pixel which are lined up in the Y-axisdirection which is the width direction of the sheet substrate FB. Forexample, one second mark BM, for example, for every 50 first marks AM isformed adjacent to the first marks AM. For example, since the sheetsubstrate FB has a long length of 200 meters, the second marks BM areprovided in order to make it easy to confirm at a predetermined intervalthat in which row the partition walls BA for the wiring of the thin filmtransistor and the partition wall BAs for the pixel are located. A pairof the first alignment sensors CA1 detects the first marks AM and thesecond marks BM and transmits a detection result to the main controlunit 90.

The fine imprint mold 11 defines the positional relationship between thefirst and second marks AM and BM and the gate and source bus lines GBLand SBL of the field effect transistor.

Thus, the main control unit 90 detects shift in the X-axis direction,shift in the Y-axis direction and θ rotation by detecting a pair of thefirst marks AM. Further, the first marks AM may also be provided at thecenter region of the sheet substrate FB as well as both sides thereof.

The first alignment sensors CA1 constantly (always) monitors the sheetsubstrate FB moved in the X-axis direction and transmits images of thefirst marks AM to the main control unit 90. The main control unit 90 hasa position counter 95 therein, and the position counter 95 counts rownumber of the organic EL elements 50 which are lined up in the Y-axisdirection among the organic EL elements 50 formed on the sheet substrateFB. Since the rotation of the rollers RR is controlled by the maincontrol unit 90, it is possible to ascertain (understand) the row numberof the organic EL element 50 which is reached the position of the gatedroplet applying apparatus 20G or the row number of the organic ELelement 50 which is reached the position of the second monitoringapparatus CH2.

The position counter 95 confirms (checks) whether an error exists whencounting the row number by the first marks AM based on the image of thesecond mark BM transmitted from the first alignment sensors CA1. Forexample, it is possible to prevent that the row number cannot beaccurately ascertained when there are defects in the locations of thefirst marks AM of the fine imprint mold 11.

The gate droplet applying apparatus 20G is disposed in the Y-axisdirection, and in which a plurality of columns of nozzles 22 arearranged in the Y-axis direction, and a plurality of rows (multirow) ofnozzles 22 are arranged in the X-axis direction. The gate dropletapplying apparatus 20G switches the timing, at which the metal ink MI isapplied from the nozzles 22, as well as the nozzles 22 applying themetal ink MI in accordance with a position signal from the main controlunit 90 based on the first alignment sensors CA1.

The heat treatment apparatus BK is provided downstream of the gatedroplet applying apparatus 20G and this heat treatment apparatus BKdries the metal ink MI applied by the gate droplet applying apparatus20G. The second monitoring apparatus CH2 is provided downstream of theheat treatment apparatus BK.

The second monitoring apparatus CH2 transmits a monitored image signalto the main control unit 90, and the main control unit 90 identifiesdefective portions in the applying of the metal ink MI, by comparing aregion, in which the metal ink MI must be applied by the gate dropletapplying apparatus 20G with the monitored image signal. The position inthe organic EL element 50 and the row number of the organic EL element50 where a defective portion occurred, or how many millimeters was thedefective portion from the first marks AM are identified in the Y-axialdirection by image processing. The row number of the organic EL element50 where a defective portion occurred in the X-axial direction isidentified based on the position counter 95, and the position in theorganic EL element 50 of that row is also identified.

The first mark AM and the second mark BM are composed of diffractiongratings GT. The first mark AM is a dot-shaped diffraction grating GTarranged in the X-axis direction and the Y-axis direction as illustratedin the upper part of FIG. 2B. The section of the dot-shaped diffractiongratings GT is illustrated in the lower part of FIG. 2B. In addition,although not shown in the drawing, the second mark BM also is adot-shaped diffraction grating GT similarly to the first mark AM.

FIG. 2C shows an alignment sensor CA for detecting the first mark AM andthe second mark BM. In order to detect the first mark AM and the secondmark BM, coherent light such as He—Ne laser light (λ=0.6328 μm) isirradiated onto first mark AM and the second mark BM. Then, a±n orderimage (n=1, 2, . . . ) from the dot-shaped diffraction grating GT isdetected via a lens LEN.

If an interval (i.e., a grating constant) of the dot-shaped diffractiongrating GT is taken as L, a wavelength of the coherent light is taken asλ, and if an angle between the coherent light irradiation angle(irradiation direction) and alignment direction of the alignment sensorCA are taken as θ, then a relationship of L sin θ=nλ(n=±1, ±2, . . . )is established.

As illustrated in the graph shown in FIG. 2C, the alignment sensor CAdetects a waveform-shaped signal in the portion where the dot-shapeddiffraction grating GT exists, but detects no signal in the portionwhere the dot-shaped diffraction grating GT does not exist. Because ofthis, the position counter 95 digitalizes the detected signal, andcounts the row number of the organic EL element 50, which are arrangedin the Y-axis direction, among the organic EL elements 50 formed on thesheet substrate FB. Thus, it is possible to accurately and quicklyascertain the position of the organic EL element 50. Further, since thefirst mark AM and the second mark BM are diffraction gratings GT, theyare less contaminated.

<<Organic EL Element 50 Formed on Partition Wall of Field EffectTransistor>>

FIG. 3A to FIG. 3C are views showing the state of a bottom-contact typeorganic EL element in which the light emitting layer IR and ITOelectrode are formed. In the organic EL element 50, the gate electrodeG, the gate insulating layer I, the pixel electrode P, the organicsemiconductor layer OS, the light emitting layer IR and the ITOelectrode are formed on the sheet substrate FB.

In FIG. 3A to FIG. 3C, the sheet substrate FB is composed of a heatresistance resin film. In detail, polyethylene resin, polypropyleneresin, polyester resin, ethylene-vinyl copolymer resin, polyvinylchloride resin, cellulose resin, polyamide resin, polyimide resin,polycarbonate resin, polystylene resin, vinyl acetate and the like canbe used for the sheet substrate FB.

As described above, since the sheet substrate FB is subject to the heattreatment of the heat transfer in the partition wall formation processand various types of ink must be dried or baked by the heat treatmentapparatus BK, the sheet substrate FB is heated to approximately 200degrees. Preferably, the sheet substrate FB has a small thermalexpansion coefficient such that the dimensions thereof do not changewhen heat applied thereto. For example, the thermal expansioncoefficient can be reduced by mixing inorganic filler with resin film.For example, the inorganic filler includes titanium oxide, zinc oxide,alumina, silicon oxide and the like.

As shown in FIGS. 3B and 3C, because the partition wall BA allows arepresent, the electrodes, the light emitting layer and the like can beformed accurately and uniformly. Since the sheet substrate FB is movedby the rollers RR in the X-axis direction (longitudinal direction) at ahigh speed, even if there is a possibility that the droplet applyingapparatus 20 will not be able to accurately apply the droplets, theelectrodes, the light emitting layer and the like can be formedaccurately and uniformly.

In addition, the manufacturing apparatus 100 can be used formanufacturing various field effect transistors in addition to the fieldeffect transistor illustrated in FIGS. 3A to 3C. For example, a top-gatetype field effect transistor can also be manufactured by changing thesequence of ink applied on the sheet substrate FB.

<<Monitoring Apparatus CH>>

Hereinafter, various monitoring apparatuses CH will be described withreference to FIGS. 4A to 7B.

FIGS. 4A to 4C are a diagram illustrating the first monitoring apparatusCH1 in the partition wall formation process. FIG. 4A is a top view ofthe sheet substrate FB imprinted by the fine imprint mold 11. Further,FIG. 4B is a sectional view taken along line c-c shown in FIG. 4A. FIG.4C is a schematic view illustrating the state in which the firstmonitoring apparatus CH1 monitors the partition walls BA.

Since the partition walls BA of the sheet substrate FB, which are formedby the fine imprint mold 11, serve as a base of an wiring and the like,it is important whether the partition walls BA are accurately formed inthe sequent applying process of the metal ink MI. As illustrated in FIG.4B, the partition walls BA are originally to be formed as indicated by asolid line. However, dust may be attached to the fine imprint mold 11 orthe sheet substrate FB, so a defective partition wall E-BA having aninaccurate (incorrect) shape may be formed. Therefore, a groove GRbetween the partition walls BA on which the metal ink MI is applied isnot formed accurately.

For example, the first monitoring apparatus CH1 illustrated in FIG. 4Cis a laser measuring instrument, and includes a laser source LED, a lensLEN and a sensor SEN. Further, the laser source LED irradiates lightonto the sheet substrate FB, and reflected light thereof is received inthe sensor SEN, so that the height of the partition walls BA ismeasured.

FIGS. 5A to 5C are views illustrating the second monitoring apparatusCH2 in the electrode formation process. FIG. 5A is a top view of thesheet substrate FB which is completed the electrode formation process.Further, FIG. 5B is a sectional view taken along line c-c shown in FIG.5A. FIG. 5C is a schematic view illustrating the state in which thesecond monitoring apparatus CH2 monitors the gate bus line GBL.

Under normal circumstances, the metal ink MI is accurately applied inthe groove GR between the partition walls BA for the gate bus line GBLas shown in FIG. 5A, and the metal ink MI is dried or baked by the heattreatment apparatus BK, so that the metal ink MI becomes a thin film asshown in FIG. 5B. However, due to malfunction of the nozzles 22 of thegate droplet applying apparatus 20G and the like, the metal ink MI maybe applied on top of the partition wall BA or a portion which isdifferent from a designed portion.

The second monitoring apparatus CH2 shown in FIG. 5C includes a one ortwo-dimensional camera. For example, the second monitoring apparatus CH2illuminates the bottom surface of the sheet substrate FB from underneathby using a lamp LAM and monitors transmission light thereof. Asillustrated in FIG. 5C, the state in which the metal ink MI has beenapplied on the partition wall BA can be monitored (observed). Inaddition, since many sheet substrate FB are transparent, placing thelamp LAM below the sheet substrate FB until the first-half process(i.e., the process in which monitoring is performed by the fourthmonitoring apparatus CH4) makes monitoring easier than the case ofmonitoring a reflected light.

FIGS. 6A to 6B are views showing the fifth monitoring apparatus CH5 inthe process of the cutting apparatus 30 for forming the gap between thesource electrode S and the drain electrode D. FIG. 6A is a top view ofthe sheet substrate FB which is completed the cutting process. Further,FIG. 6B is a sectional view taken along line c-c shown in FIG. 6A andshows the state in which the fifth monitoring apparatus CH5 monitors thecutting state.

Since the gate electrode G and the gate insulating layer I have beenalready formed in the vicinity of the source electrode S and the drainelectrode D, it is difficult for the fifth monitoring apparatus CH5 tomonitor the gap between the source electrode S and the drain electrode Dby using transmission light. In this regard, the lamp LAM is disposed inthe vicinity of the fifth monitoring apparatus CH5 and the vicinity ofthe source electrode S and the drain electrode D is monitored.

<<Identification of Repair Portions>>

FIG. 7A is a perspective view from the fourth alignment sensor CA4 tothe fifth monitoring apparatus CH5. Since the identification of repairportions (portions to be repaired) is basically performed in the samemanner in other processes, monitoring of the gap between the sourceelectrode S and the drain electrode D, which is formed by the cuttingapparatus 30, will be described as a representative example.

The fourth alignment sensor CA4 is connected to the main control unit90, and transmits the image signal of the first marks AM to the maincontrol unit 90. The main control unit 90 measures the tilt and positionin the Y-axis direction of the sheet substrate FB based on the imagesignal. Further, the main control unit 90 measures the stretching in theY-axis direction of the sheet substrate FB by measuring the first marksAM at both sides of the sheet substrate FB.

The main control unit 90 also controls the rotation of the rollers RR,thus can also ascertain the movement speed in the X-axis direction ofthe sheet substrate FB, and outputs a signal to the cutting apparatus 30such that the gap between the source electrode S and the drain electrodeD of each organic EL element 50 is formed based on the first marks AM.After a laser is irradiated from the cutting apparatus 30, the directionof the laser is adjusted to a predetermined position by a Galvano mirror32 and the like.

The main control unit 90 internally includes the position counter 95that counts the position in the X-axis direction, a repair portionidentifying section 96 that identifies defective portions, that is,repair portions which require repairing, and a storage section 97 thatstores a design dimension of the organic EL element 50, the repairportions and the like. The repair portion identifying section 96includes a feature amount determining section 961, a differencedetermining section 962, a defect number determining section 963 and adefect density determining section 964.

The fifth monitoring apparatus CH5 includes a lens LEN and aone-dimensional CCD therein. An image of the one-dimensional CCD istransmitted to the main control unit 90. The main control unit 90 canascertain the state of the gap between the source electrode S and thedrain electrode D, which is formed by the cutting apparatus 30. Therepair portion identifying section 96 compares a design value stored inthe storage section 97, that is, the gap between the source electrode Sand the drain electrode D, with an actual gap between the sourceelectrode S and the drain electrode D, which is formed by the cuttingapparatus 30, thereby identifying a different portion as the defectiveportion. The repair portion identifying section 96 can identify thedistance (μm) by which the defective portion is separated from the firstmark AM in the X-axis direction and the Y-axis direction, and identifythe row number of the organic EL element 50 based on the counting of theposition counter 95. The identified repair portions are stored in thestorage section 97 and data regarding the repair portions is used in therepair process.

FIG. 7B is a flowchart illustrating a process that forming the gapbetween the source electrode S and the drain electrode D shown in FIG.7A and a process that storing the repair portions.

In Step P11, the alignment sensor CA5 takes images of the first mark AM,and sends an image signal to the main control unit 90.

In Step P12, the main control unit 90 calculates the position of thefirst mark AM, and the position counter 95 counts the row number of theorganic EL element 50. The first mark AM is used for the cuttingapparatus 30 to determine the position of the source electrode S and thedrain electrode D, and is also used to identifying the row number of theorganic EL element 50. In addition, the row number of the organic ELelement 50 may also be identified by imaging the second mark BM usingthe fourth alignment sensor CA4 as described in FIG. 2A.

In Step P13, a laser is irradiated from the cutting apparatus 30 to thesheet substrate FB based on the position of the first mark AM and theposition of the gap between the source electrode S and the drainelectrode D which is stored in the storage section 97.

In Step P14, the fifth monitoring apparatus (observing apparatus) CH5sends an image signal regarding the state of the gap between the sourceelectrode S and the drain electrode D to the repair portion identifyingsection 96. Since the sheet substrate FB is moved in the X-axisdirection, it is sufficient if the fifth monitoring apparatus CH5 is aone-dimensional CCD extending in the Y-axis direction. Since themovement speed of the sheet substrate FB is fast, if there is a lot ofnoises generated in the image signal regarding the gap between thesource electrode S and the drain electrode D, then it is possible toprepare a two-dimensional CCD to which is connected a frameaccumulation-type memory, which gradually shifts the accumulationlocation of the CCD to match the movement speed of the sheet substrateFB. This method is a kind of a CCD reading method which is generallyreferred to as TDI (Time Delayed Integration) method.

Next, in Step P15, the repair portion identifying section 96 comparesthe gap between the source electrode S and the drain electrode D, whichis stored in the storage section 97, with the image signal regarding theactual gap state, thereby identifying the defective portion. Theidentifying of the defective portion will be described in detail withreference to FIGS. 8A, 8B and 8C.

In Step P16, the defective portions are stored in the storage section 97as repair portions which requires repair, and is stored therein in formof the row number and the distance from the position of the first markAM.

The left part (a) in FIG. 8A illustrates the organic EL elements 50monitored by the fifth monitoring apparatus CH5 and a matrix MAT whichis overlapped with the organic EL elements 50.

The one-dimensional CCD of the fifth monitoring apparatus CH5 can outputimage data for each pixel pitch in the Y-axis direction, and can alsooutput image data in the X-axis direction of the sheet substrate FB ateach predetermined pitch, by adjusting a sampling time, because thesheet substrate FB is moved in the X-axis direction at a constant speed.That is, it is possible to obtain an image data of subdivided partialregions with respect to the organic EL element 50. The image data isstored in the storage section 97 as the matrix MAT.

As illustrated in the left part (a) in FIG. 8A, since the first marks AMare formed on the sheet substrate FB, the image data of the subdividedpartial regions is associated with position information in the X-axisdirection and the Y-axis direction. In addition, the pixel pitch of theone-dimensional CCD, the magnification of the lens LEN and the like ofthe fifth monitoring apparatus CH5 illustrated in FIG. 7A are changed,so that the size of the subdivided partial regions can be changed.

The right part (b) in FIG. 8A is a view showing the subdivided partialregions stored in the storage section 97 as the matrix MAT. Thesubdivided partial regions are stored in the storage section 97 as data(Dn (m, n)) of the (k×h) matrix MAT (i.e. row k and column h in matrixMAT) together with position information of a region. However, it is notnecessary to define the (k×h) matrix MAT according to the pixel pitchand the like of the one-dimensional CCD. Since the fifth monitoringapparatus CH5 has the main purpose of monitoring the gap between thesource electrode S and the drain electrode D, one matrix may be providedfor each pixel of the organic EL element 50, and the gap between thesource electrode S and the drain electrode D may be stored in thestorage section 97 together with the position information of the partialregions.

The repair portion identifying section 96 identifies the defectiveportions based on the data (Dn (m, n)) of the matrix MAT which is storedin the storage section 97. The identifying of the defective portion willbe described in detail with reference to FIG. 8B.

FIG. 8B is a defect determination flowchart illustrating a procedure foridentifying the defective portions based on the data Dn (m, n) of thematrix MAT, and determining a line stop of the manufacturing apparatus100 shown in FIG. 1, a repair performed by a repair apparatus 110 to bedescribed in FIG. 9, and the like.

In Step P31, the data Dn (m, n) of the (k×h) matrix MAT is set. Theflowchart will be described on the assumption that data Dn (m, n) of onerow and one column is allocated to one pixel (including one gateelectrode G, one source electrode S, one drain electrode D and one pixelelectrode P, respectively) of the organic EL element 50 for the purposeof convenience for the explanation.

In Step P32, the fifth monitoring apparatus CH5 monitors the organic ELelement 50. By this, the data Dn (m, n) of the matrix MAT is transmittedto the repair portion identifying section 96. Since the fifth monitoringapparatus CH5 monitors the gap between the source electrode S and thedrain electrode D, the gap corresponds to a feature amount monitored bythe fifth monitoring apparatus CH5. For example, Dn (m, n) correspondsto dimension data when the gap is set to 25 μm, and then Dn (m, n)=25 μmis transmitted to the repair portion identifying section 96.

In Step P33, the feature amount determining section 961 (refer to FIG.7A) of the repair portion identifying section 96 determines whether thegap data Dn (m, n) exists within a first range A1. For example, thefirst range A1 is 20 μm to 30 μm. In the determination of the featureamount determining section 961, if the data Dn (m, n) is 25 μm, Step P34is performed. However, if the data Dn (m, n) is 15 μm or 35 μm, Step P36is performed because the data Dn (m, n) is out of the first range A1.

In Step P34, the difference determining section 962 compares the data Dn(m, n) with data of a peripheral region of the data Dn (m, n). Indetail, the difference determining section 962 calculates a differencebetween the data Dn (m, n) which is a feature amount and data Dn (m−1,n) of a pixel before one row (one row previous). That is, the differencedetermining section 962 calculates ΔDn1 which is equal to |Dn (m, n)−Dn(m−1, n)|. Further, the difference determining section 962 calculatesdifferences between the data Dn (m, n) and data Dn (m, n−1) and Dn (m,n+1) of pixel before and after one column. That is, the differencedetermining section 962 calculates ΔDn2 which is equal to |Dn (m, n)−Dn(m, n−1)| and ΔDn3 which is equal to |Dn (m, n)−Dn (m, n+1)|.

In Step P35, the difference determining section 962 determines whetherthe differences ΔDn1, ΔDn2 and ΔDn3 exist within a second range A2. Ifall the differences ΔDn1, ΔDn2 and ΔDn3 exist within the second rangeA2, Step P37 is performed. However, if any one of the differences is outof the second range A2, Step P36 is performed. For example, the secondrange A2 is 0 to 5 μm.

In Steps P33 and P35, even if the feature amount determining section 961determined that the Dn (m, n) exists in the first range A1, thedifference determining section 962 further determines whether thedifferences ΔDn1, ΔDn2 and ΔDn3 exist in the second range A2, the reasonfor this is as follows. That is, the gap between the source electrode Sand the drain electrode D in the organic EL element 50 exertssignificant influence on light emission luminance. If the luminancedifference between a pixel and other pixels around the pixel is large,since the human eye easily feels uncomfortable in regard to luminanceunevenness (ununiformity) and the like, it is treated as a defectiveregion. Meanwhile, if luminance is gradually changed, the human eye doesnot notice luminance unevenness (ununiformity). Even when data Dn (1, 1)and data Dn (k, h) exist in 21 μm and 29 μm respectively, if the changeof luminance along the above range is small, the human eye does notrecognize luminance unevenness (ununiformity).

In Step P36, the data Dn (m, n) is defined as defective regions and thenumber of the defective regions is counted.

In Step P37, it is determined that the pixel of the organic EL element50 of the data Dn (m, n) is good product.

In Step P38, the defect number determining section 963 determineswhether the defect number N1 (number of the defects) is equal to or lessthan a first threshold value B1. If the defect number N1 is greater thanthe first threshold value B1, since it is determined that the defectnumber N1 is too much and it cannot be handled at repair, and Step P42is performed so that the line of the manufacturing apparatus 100 isstopped. Then, maintenance of the manufacturing apparatus 100 isperformed. However, if the defect number N1 is equal to or less than thefirst threshold value B1, since it is determined that the defects can bebasically handle by repair, because the defect number N1 is not largeenough to stop the manufacturing apparatus 100, and Step P39 isperformed.

In Step P39, the defect density determining section 964 calculates thedefect number N2 in a square region located (interposed) between (m−r,n−r) and (m+r, n+r). In addition to the square region, a rectangularregion may also be employed.

In Step P40, the defect density determining section 964 determineswhether the defect number N2 in the square region is equal to or lessthan a second threshold value B2. If the defect number N2 in the squareregion is greater than the second threshold value B2, that is, a defectdensity is larger than the second threshold value B2, since it isdetermined that the defects are difficult to be handle at repair,because they are densely concentrated in one portion, and Step P42 isperformed so that the line of the manufacturing apparatus 100 isstopped. Then, maintenance of the manufacturing apparatus 100 isperformed. However, if the defect density is equal to or less than thesecond threshold value B2, Step P41 is performed so that the defects arerepaired in a repair line.

In Step P41, the defective regions are repaired by the repair apparatus110 and the like, which is to be described in FIG. 9A. The fact that thedefect density is less than the second threshold value B2 means that thedefective regions are scattered. Thus, even if the defective regions arerepaired, the repaired regions are not visible. In addition, the data(Dn (m, n)) stored in the storage section 97 together with the positioninformation is transmitted to a repair main control unit 190 of therepair apparatus 110.

In Step P42, after the line of the manufacturing apparatus 100 isstopped, maintenance work is performed such that no defects aregenerated.

FIG. 8C is a flowchart different from the defect determination flowchartof FIG. 8B. In FIG. 8C, Steps P36 and P38 of FIG. 8 are omitted.

When the defect number N1 is large, even if the defect numberdetermining section 963 does not exist, a case may often occur in whichthe defect density determining section 964 determines that the defectnumber N2 is larger than the second threshold value B2. Thus, even ifSteps P36 and P38 are omitted, the same effects can be obtained.

In FIGS. 8A to 8C, the monitoring by the fifth monitoring apparatus CH5of the gap between the source electrode S and the drain electrode D hasbeen described. However, defect detection using the data Dn (m, n) ofthe matrix MAT can be likewise applied to the detection by the firstmonitoring apparatus CH1 of the height of the partition wall BA, thedetection by the third monitoring apparatus CH3 of the applying positionof the metal ink MI, and the like.

<<Repair Apparatus for Organic EL Element>>

FIG. 9A is a schematic view showing the repair apparatus 110 thatrepairs the organic EL element 50 having repair portions by a batchprocessing. The repair apparatus 110 is controlled by the repair maincontrol unit 190. The repair main control unit 190 includes a repairposition counter 195 and a repair storage section 197. These elementsare substantially identical to the position counter 95 and the storagesection 97 of the manufacturing apparatus 100, except that the repairportions, which are identified by the repair portion identifying section96 and then stored in the storage section 97 of the manufacturingapparatus 100, are transmitted to the repair storage section 197.

The repair apparatus 110 for the organic EL element includes a dispenser160 for partition wall repair, a laser zapping apparatus 170, a repairdroplet applying apparatus 120G for a gate, a repair droplet applyingapparatus 120I for an insulating layer, a repair droplet applyingapparatus 120SD for source, drain and pixel electrode, a repair cuttingapparatus 130, a repair droplet applying apparatus 120OS for organicsemiconductor, and a remover 115. Since the repair droplet applyingapparatus 120 and the repair cutting apparatus 130 are equal to thedroplet applying apparatus 20 and the cutting apparatus 30 of themanufacturing apparatus 100, details thereof will be omitted.

The dispenser 160 for the partition wall repair appliesultraviolet-curable resin HR having a high viscosity. Theultraviolet-curable resin HR is applied on the sheet substrate FBthrough nozzles of the dispenser 160 for the partition wall repair byair pressure and the like, so that partition walls BA of theultraviolet-curable resin are formed. The partition walls BA of theultraviolet-curable resin HR formed on the sheet substrate FB are curedby an ultraviolet lamp 165 such as a mercury lamp.

If the partition walls BA are repaired, the metal ink MI or the like isapplied by the repair droplet applying apparatus 120G for the gate andthe like, so that the organic EL element 50 is repaired. The remover 115is provided for the final process of the repair apparatus 110 for theorganic EL element. The remover 115 removes a portion where thepartition wall BA protrudes higher the design value as a result of theimprinting, or removes the portions where the cured ultraviolet-curableresin HR protrudes higher than the design value, or removes the metalink MI applied on a portion different from an originally designedportion. In detail, the defective portion is sublimated by a laser orcut away by a knife 117.

In the repair apparatus 110 for the organic EL element, the wind-up rollRE of the manufacturing apparatus 100, which wounds the sheet substrateFB in a roll shape in the final process, is mounted on a repair supplyroll FRL. Therefore, the repair apparatus 110 feeds the sheet substrateFB in the −X-axis direction which is reverse to the +X-axis directionwhich is traveling direction of the manufacturing apparatus 100. Thatis, the repair apparatus 110 feeds the sheet substrate FB from thetermination to a beginning direction of the wind-up roll RE which iswound in the manufacturing apparatus 100, and the sheet substrate FB iswound onto a repair wind-up roll FRE.

In the repair supply roll FRL and the repair wind-up roll FRE, thevariation of speed can be significantly increased as compared with thesupply roll RL and the wind-up roll RE of the manufacturing apparatus100. If a plurality of repair portions exist in the range of 102 metersto 105 meters from the termination of the sheet substrate FB having alength of 200 meters or more, the repair supply roll FRL and the repairwind-up roll FRE are rotated to the vicinity of 102 meters from thetermination at a high speed and then rotated at a low speed, so that thesheet substrate FB is moved to the repair portions which exist in thedistance of 102 meters from the termination. Consequently, the repairapparatus 110 performs such an operation to shorten the repair timerequired in the batch processing.

An eleventh alignment sensor CA11 is provided downstream of the −X-axisdirection of the repair supply roll FRL. The eleventh alignment sensorCA11 detects the first marks AM and the second marks BM. When the repairportions exist in the range of 102 meters to 105 meters from thetermination of the sheet substrate FB having a length of 200 meters ormore, the sheet substrate FB is feed at a high speed. Thus, the repairmain control unit 190 confirms the feed position of the sheet substrateFB based on the image signal of the second marks BM provided for eachrow of the organic EL element 50. Then, if the repair portions areapproaching, the sheet substrate FB is feed to the row number of theorganic EL element 50 where the repair portion is located by using thefirst marks AM.

In the final process of the repair apparatus 110, the eleventhmonitoring apparatus CH11 is provided to check whether the repairprocess has been completely performed. It is also possible for aneleventh monitoring apparatus CH11 to be provided not only in the finalprocess, but in each repair process.

In FIG. 9A, description regarding the repair process after the dropletapplying apparatus 20 for the light emitting layer is omitted. However,it is of course possible to also provide a repair droplet applyingapparatus 120 for a light emitting layer.

FIG. 9B is a repair flowchart illustrating the repair apparatus 110 thatperforms the batch processing illustrated in FIG. 9A.

In Step P91, the repair storage section 197 receives data regardingrepair portions from the storage section 97 of the manufacturingapparatus 100. Thus, the repair main control unit 190 ascertains therepair portions where repairs need to be made.

In Step P92, the repair main control unit 190 decides the rotationalspeed of the repair supply roll FRL and the like based on the row numberof the repair portions. For example, if the repair portions are locatedadjacent to the termination of the wind-up roll RE which is wound in themanufacturing apparatus 100, the repair main control unit 190 decidesthe repair supply roll FRL and the like to rotate at a low speed.However, if the repair portions are located far from the termination ofthe wind-up roll RE, the repair main control unit 190 decides the repairsupply roll FRL and the like to rotate at a high speed. As describedabove, control of the rotational speed results in shortening of themovement time to the repair portions. The repair main control unit 190feeds the sheet substrate FB at the decided rotational speed in the−X-axis direction.

In Step P93, the repair main control unit 190 determines whether therepair supply roll FRL and the like is rotated at a high speed. If theyare rotated at a high speed, then proceeds to Step P94. However, if theyare rotated at a low speed, then proceeds to Step P97.

In Step P94, the repair position counter 195 counts the row number ofthe organic EL element 50 based on the first mark AM and the second markBM shown in FIG. 2. In the counting of the row number, the row numbergradually decreases because the sheet substrate FB is moved in the−X-axis direction.

In Step P95, the repair main control unit 190 determines whether therepair portions are approaching based on the counting result of the rownumber by the repair position counter 195. If the repair portions areapproaching, then proceeds to Step P96. However, if the repair portionsare not approaching, then returns to Step P94.

In Step P96, the repair main control unit 190 sets the repair supplyroll FRL and the like to rotate at a low speed. Further, the repair maincontrol unit 190 selects a repair apparatus based on the data regardingrepair portions stored in the repair storage section 197, and moves therepair apparatus in advance in the Y direction of the defects. In thisway, the correction time can be shortened.

Next, in Step P97, the row number is counted based on the first mark AMand the position is confirmed using the first mark AM as an alignmentmark. The repair main control unit 190 confirms tilt or shift of thesheet substrate FB in the Y-axis direction.

In Step P98, the position of the repair apparatus 110 is adjusted in oneor both of X and Y directions, and the defective portions of the organicEL element 50 are repaired based on the position of the first mark AMand the repair portion data stored in the repair storage section 197. Ifthe partition wall BA is defective, then the partition wall repairdispenser 160, the laser zapping apparatus 170 or the remover 115repairs the defective portions thereof. If defective applying of themetal ink MI occurs in the pixel region, the laser zapping apparatus 170removes the defective metal ink MI and the repair droplet applyingapparatus 120SD newly applies metal ink MI. As described above, therepair main control unit 190 appropriately selects a repair processaccording to the defect contents of the repair portions. A plurality ofthe same repair apparatuses are provided so that movement in the Ydirection can be reduced or removed (canceled). In addition, the repairscan be performed at the same time.

In Step P99, the eleventh monitoring apparatus CH11 sends an imagesignal regarding the repair state to the repair main control unit 190.Further, the eleventh monitoring apparatus CH11 confirms whether therepair portions are completely recovered.

If all repair portions have been completely repaired, the roller FRL andthe like is set to be rotated in the reverse direction so as to be in astate equal to the winding state in the manufacturing apparatus 100(P100).

The feeding speed of the sheet substrate FB by the repair supply rollFRL is divided into two stages, that is, a low speed and a high speed.However, speed variation of three stages or more may be accomplished. Itis preferable for the speed control to be a type of feedback controlsuch as PID control or the like.

Further, in the above flowchart, the repair apparatus 110 confirms thefirst mark AM and the second mark BM and performs the repair processduring the movement of the sheet substrate FB in the −X-axis direction.However, the repair apparatus 110 may also perform the repair processduring the movement of the sheet substrate FB in the X-axis directionafter completely moving the sheet substrate FB in the −X-axis direction.

<<Manufacturing and Repair Apparatus for Organic EL Element>>

FIG. 10 is a schematic view showing a manufacturing and repair apparatus200 that monitors defective portions while manufacturing the organic ELelement 50, and repairs the defective portions in line when defectiveportions have occurred. Note that, processes after the light emittinglayer process are not shown in FIG. 10. Further, in FIG. 10, the samereference numerals are used to designate the same elements as those ofthe manufacturing apparatus 100 shown in FIG. 1 or the repair apparatus110 shown in FIG. 9A.

The sheet substrate FB which has been fed from the supply roll RL ispressed by the imprint roller 10, and the sheet substrate FB is heatedby the thermal transfer roller 15 to a glass transition point or moresuch that the shape of the pressed partition walls BA is maintained.

The first monitoring apparatus CH1, the partition wall repair dispenser160, and the laser zapping apparatus 170 are provided downstream of theX-axis direction of the imprint roller 10. The repair droplet applyingapparatus 120G for the gate is provided downstream of the laser zappingapparatus 170. The first monitoring apparatus CH1 monitors whether thepartition walls BA for the wiring of the thin film transistor and thedisplay pixel have been accurately formed. If defective portions arefound in the partition walls BA by the first monitoring apparatus CH1,the partition wall repair dispenser 160 applies ultraviolet-curableresin HR on the sheet substrate FB. Then, the resin cured by using anultraviolet lamp 144 and the partition walls BA of the defectiveportions is repaired. Further, if extra partition walls BA have beenformed, the laser zapping apparatus 170 removes the extra partitionwalls BA. The first alignment sensor CA1 is provided downstream of thelaser zapping apparatus 170.

After the first mark AM and the second mark BM are detected by the firstalignment sensor CA1, the sheet substrate FB is subject to an electrodeformation process.

In the electrode formation process, the gate droplet applying apparatus20G receives position information from the first alignment sensor CA1and applies the metal ink MI in the groove GR between the partitionwalls BA of the gate bus line GBL. Then, the metal ink MI is dried orbaked by the heat treatment apparatus BK.

The second monitoring apparatus CH2 is provided downstream of the gatedroplet applying apparatus 20G, and the repair droplet applyingapparatus 120G for the gate is provided downstream of the secondmonitoring apparatus CH2. The second monitoring apparatus CH2 monitorswhether the metal ink MI has been applied on the gate bus line GBL andserves as a conductive line. If defective portions are found in the gatebus line GBL by the second monitoring apparatus CH2, the repair dropletapplying apparatus 120G for the gate applies the metal ink MI on thesheet substrate FB. The second alignment sensor CA2 is provideddownstream of the repair droplet applying apparatus 120G for the gate.

Also in the case of the insulating layer droplet applying apparatus 20Iand the like, a monitoring process is performed after a manufacturingprocess and defective portions are repaired in a repair process if theyare found in the monitoring process. Further, in the manufacturing andrepair apparatus 200 shown in FIG. 10, the remover 115 is provided afterthe organic semiconductor droplet applying apparatus 20OS. However,plural remover 115 may be provided after the imprint roller 10, or aftereach droplet applying apparatus 20 or the like.

In addition, the manufacturing time of the organic EL element 50 doesnot always coincide with the repair time of defective portion in thesame process. Moreover, the imprint process or each applying process isnot completed in the same time. Therefore, when in-line manufacturing orrepair is performed, the supply roller RL and the like must be rotatedaccording to the speed of a process requiring much more time. However,since the productivity cannot be increased under such circumstances, ifthe process requiring much more time is a process in which the remover115 removes the defective portion, then productivity can be raised asmuch as possible by providing two removers 115, or by allowing the sheetbody FB to be hang loosely as shown in the lower left end of FIG. 10,resulting in an increase in productivity.

INDUSTRIAL APPLICABILITY

The manufacturing apparatus and the repair apparatus for the organic ELelement have been described. However, the manufacturing apparatus andthe repair apparatus can also be applied to field emission displays,liquid crystal display elements and the like. In the present embodiment,the thin film transistor using the organic semiconductor has beendescribed. However, a thin film transistor of an amorphous silicon-basedinorganic semiconductor may also be employed.

Further, the heat treatment apparatus BK is provided for themanufacturing apparatus 100, the repair apparatus 110 and themanufacturing and repair apparatus 200 of the embodiment. However, withthe improvement of metal ink MI, light emitting layer solvents and thelike, ink or solvents which do not require heat treatment has beenproposed. In this regard, it is not always necessary to provide the heattreatment apparatus BK in the present embodiment.

1. A defect detection method of a display device, comprising: a defectcounting process that measuring a feature amount for each partial regionof the display device, and counting a region which is determined as adefective region based on the measured feature amount of a region; aprocess that stopping a manufacturing line of the display device when anumber of defects obtained in the defect counting process is greaterthan a first threshold value; a defect density calculating process thatcalculating a defect density in a predetermined area when the number ofdefects obtained in the defect counting process is smaller than thefirst threshold value; and a process that stopping the manufacturingline of the display device when the defect density obtained in thedefect density calculating process is greater than a second thresholdvalue.
 2. The defect detection method according to claim 1, comprising:a process that repairing the display device in a repair line when thedefect density obtained in the defect density calculating process issmaller than the second threshold value.
 3. The defect detection methodaccording to claim 2, wherein a defect data which includes a measuredposition information and a feature amount is transmitted to the repairline, when the display device is sent to the repair line.
 4. The defectdetection method according to claim 3, wherein the display device isformed on a roll shaped flexible substrate, and the flexible substrateis fed at a predetermined speed in the row direction and wound in a rollshape in the manufacturing line; and in the repair line, the defectiveregion of the display device which is fed from a state being wound inthe roll shape is repaired based on the defect data.
 5. A defectdetection apparatus of a display device, comprising: a defect numberdetermining section that measures a feature amount for each partialregion of the display device, and counts a number of defects in apartial region which is determined as a defective region based on themeasured feature amount of the partial region, and determines whetherthe number of defects is greater than a first threshold value; and adefect density determining section that calculates the number of defectsexisting in a predetermined area when the defect number determiningsection determines that the number of defects is smaller than the firstthreshold value, and determines whether the number of defects existingin the predetermined area is greater than a second threshold value. 6.The defect detection apparatus according to claim 5, comprising: aposition counter that identifies a position of the defective region, andoutputs the position as position information; and a storage section thatstores a defect data which includes the position information and thefeature amount of a region which is determined as the defective region.7. A defect detection apparatus of a display device, comprising: adefect density determining section that measures a feature amount foreach partial region of the display device, counts a number of defects inthe partial region which is determined as a defective region based onthe measured feature amount of the partial region, calculates the numberof defects existing in a predetermined area if the number of defects inthe partial region of the display device is smaller than a firstthreshold value, and determines whether the number of defects existingin the predetermined area is greater than a second threshold value. 8.The defect detection apparatus according to claim 7, wherein the displaydevice comprises a plurality of pixel areas defined by a plurality ofpartition walls, and the feature amount comprises at least one of aheight of the partition wall, a position of the partition wall, and agap between electrodes of the display device.
 9. The defect detectionapparatus according to claim 8, wherein the partial region comprises aplurality of subdivided partial regions which are arranged in a matrixof rows and columns.
 10. The defect detection apparatus according toclaim 9, wherein the number of defects in the partial region is countedas a number of the subdivided partial regions including the defect. 11.The defect detection apparatus according to claim 10, wherein thepredetermined area is determined by the subdivided partial regionsarranged in row and column directions of the matrix.